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A Product Line of
Diodes Incorporated
ZXMN3AMC
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.5
±100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
1.0
-
-
-
-
-
-
0.100
0.140
3.5
0.85
17.7
13.0
3.0
0.120
0.180
-
0.95
-
-
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2.0A
V DS = 10V, I D = 2.5A
I S = 1.7A, V GS = 0V
I S = 2.5A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
C iss
C oss
C rss
Q g
Q g
-
-
-
-
-
190
38
20
2.3
3.9
-
-
-
-
-
pF
pF
pF
nC
nC
V DS = 25V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V
V DS = 15V
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Q gs
Q gd
t D(on)
-
-
-
0.6
0.9
1.7
-
-
-
nC
nC
ns
V GS = 10V
I D = 2.5A
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
t r
t D(off)
t f
-
-
-
2.3
6.6
2.9
-
-
-
ns
ns
ns
V DS = 15V, I D = 2.5A
V GS = 10V, R G = 6 ?
Notes:
10. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
ZXMN3AMC
Document number: DS35087 Rev. 1 - 2
4 of 8
www.diodes.com
December 2010
? Diodes Incorporated
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